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cht3 029 - qeg ref. : dscht3029 - qeg5357 - 23 dec 15 1 / 12 specifications subject to change without notice united monolithic semiconductors s.a.s. bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 - www.ums - gaas.com dc - 31ghz 4bit digital attenuator gaas monolithic microwave ic in smd leadless package description the cht3029 - qeg is a very wide band digital attenuator, which integrates 4 bits with a lsb of 1db and provides a dynamic range of 15db from dc to 31ghz . it is designed for a wide range of applications, from military to c ommercial communication systems. the circuit is manufactured with a phemt process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. it is supplied in rohs compliant smd package. main features main electrical characteristics tamb.= +25c symbol parameter min typ max unit freq frequency range dc 31 ghz il insertion loss @20ghz @31ghz 4 .0 8 .0 db db rms_att_er rms of attenuation error 0.5 db dyn dynamic 15 db
cht3029 - qeg dc - 31ghz 4bit digital attenuator ref. : dscht3029 - qeg5357 - 23 dec 15 2 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 - www.ums - gaas.com electrical characteristics tamb.= +25c, v + = + 5.0v v - = - 5.0v symbol parameter min typ max unit freq frequency range dc 31 ghz il insertion loss @20ghz @31ghz 4 .0 8 .0 db db s11 input return loss 15 db s22 output return loss 1 2 db p1db input power at 1db gain compression 20 db m dyn dynamic 15 db lsb attenuator elementary step 1 db att_er r attenuation error - 0.5 +1 db succ_att attenuation error between 2 successive states +/ - 0.4 db rms_att_er r rms attenuation error 0.5 db phivar phase variation - 5/+20 rms_phivar rms phase variation 8 sw_t switching time 1 0 ns v+ positive supply voltage 5 v v - negative supply voltage - 5 v vctrl_l control voltage low level 0 0.4 v vctrl_h control voltage high level 2.4 3.3/5 7 v i_v+ positive supply dc current 5 ma i_v - negative supply dc current 5 ma ictrl control dc current 0.1 ma the measurement calibration planes are defined in the paragraph definition of the sij reference planes. absolute maximum ratings (1) tamb.= +25c symbol parameter values unit v+ maximum positive voltage 8 v v - minimum negative voltage - 8 v a 1/a2/a3/a4 ctrl voltage (vctrl _low, vctrl _high) - 2 to 8 v pin maximum input power 27 dbm ta operating temperature range - 40 to +85 c tstg storage temperature range - 55 to +150 c (1) operation of this device above anyone of these parameters may cause permanent damage.
dc - 31ghz 4bit digital attenuator cht3029 - qeg ref. : dscht3029 - qeg5357 - 23 dec 15 3 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 - www.ums - gaas.com definitions n: attenuator state index with 0 ? ? attenuation error ( att_err ) att_err(n)= db_s21 ( n) - db_s21 ( 0) C x n (db) the translation of att_err (n) from db to linear is given by: att_err_lin(n) = successive state attenuation error ( succ_ att_err ) succ_att_err(n)= db_s21(n) - db_s21(n - 1) - ( - 1) phase variation ( phivar ) phi var(n) = phase_s21 ( n) - phase_s21( 0) () rms attenuation error (rms_att _err ) rms_att _err = (db) rms phase variation (rms_phivar) rms_phivar = () 20 ) ( _ 10 n err att ? ? ? ? ? ? ? ? ? ? ? ? 15 0 2 )) ( _ _ 1 ( . 16 1 1 log 20 n n lin err att 16 )) var( ( 15 0 2 ? ? n n phi
cht3029 - qeg dc - 31ghz 4bit digital attenuator ref. : dscht3029 - qeg5357 - 23 dec 15 4 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 - www.ums - gaas.com typical bias conditions tamb.= +25c symbol pad n o parameter values unit a1 3 control voltage of attenuator bit 1 0 / +3.3 or +5 v a2 2 control voltage of attenuator bit 2 0 / +3.3 or +5 v a3 1 control voltage of attenuator bit 3 0 / +3.3 or +5 v a4 24 control voltage of attenuator bit 4 0 / +3.3 or +5 v v + 16 positive biasing voltage +5 v v - 17 negative biasing voltage C attenuator control table voltage to apply on pads a1 to a4 state att (db) a4 (v) a3 (v) a2 (v) a1 (v) 0 0 0 0 0 0 1 1 0 0 0 3.3 2 2 0 0 3.3 0 3 3 0 0 3.3 3.3 4 4 0 3.3 0 0 5 5 0 3.3 0 3.3 6 6 0 3.3 3.3 0 7 7 0 3.3 3.3 3.3 8 8 3.3 0 0 0 9 9 3.3 0 0 3.3 10 10 3.3 0 3.3 0 11 11 3.3 0 3.3 3.3 12 12 3.3 3.3 0 0 13 13 3.3 3.3 0 3.3 14 14 3.3 3.3 3.3 0 15 15 3.3 3.3 3.3 3.3
dc - 31ghz 4bit digital attenuator cht3029 - qeg ref. : dscht3029 - qeg5357 - 23 dec 15 5 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 - www.ums - gaas.com typical package sij parameters tamb.= +25c, v+= - 5v / v - = - 5v state 0 freq (ghz) s11 (db) phs11 () s12 (db) phs12 () s21 (db) phs21 () s22 (db) phs22 () 2 .0 - 16.5 - 62.8 - 2.2 - 52.9 - 2.1 - 52.7 - 17.8 - 55.8 3 .0 - 15.8 - 85.7 - 2.3 - 78.8 - 2.2 - 78.7 - 18.5 - 78.0 4 .0 - 15.6 - 104.2 - 2.3 - 104.3 - 2.3 - 103.8 - 18.8 - 93.0 5 .0 - 15.6 - 119.4 - 2.5 - 130.5 - 2.4 - 130.3 - 19.0 - 105.8 6 .0 - 15.7 - 133.8 - 2.5 - 155.7 - 2.5 - 155.8 - 18.4 - 119.7 7 .0 - 16.2 - 148.2 - 2.6 178.8 - 2.7 178.6 - 17.9 - 135.4 8 .0 - 16.8 - 164.7 - 2.7 153.1 - 2.7 153.2 - 17.9 - 153.2 9 .0 - 17.5 175.1 - 2.8 127.1 - 2.7 126.5 - 18.4 - 172.6 10 .0 - 18.9 151.6 - 2.9 101.1 - 2.8 101.1 - 20.0 170.5 11 .0 - 23.2 141.5 - 3.0 74.7 - 3.0 75.5 - 21.8 128.9 12 .0 - 26.5 113.1 - 3.1 49.1 - 3.0 49.1 - 25.1 114.5 13 .0 - 28.4 75.8 - 3.2 22.8 - 3.2 23.0 - 29.9 116.6 14 .0 - 32.2 49.5 - 3.3 - 3.6 - 3.3 - 3.1 - 31.7 155.0 15 .0 - 50.3 - 33.2 - 3.4 - 29.8 - 3.5 - 29.4 - 27.3 171.5 16 .0 - 30.1 - 177.6 - 3.6 - 56.2 - 3.6 - 56.2 - 23.1 172.3 17 .0 - 22.6 165.6 - 3.8 - 82.8 - 3.8 - 83.4 - 19.3 162.5 18 .0 - 18.3 146.4 - 4.1 - 109.4 - 4.0 - 109.3 - 16.7 145.7 19 .0 - 15.3 127.4 - 4.4 - 135.5 - 4.3 - 135.2 - 14.5 130.5 20 .0 - 14.1 112.4 - 4.6 - 161.7 - 4.6 - 161.7 - 14.0 107.7 21 .0 - 13.9 100.6 - 4.8 172.2 - 4.7 171.8 - 14.0 88.3 22 .0 - 14.3 92.4 - 4.9 145.2 - 4.8 145.3 - 15.2 71.1 23 .0 - 15.3 89.1 - 5.1 118.1 - 5.0 117.8 - 17.3 59.5 24 .0 - 16.9 91.8 - 5.3 90.6 - 5.2 90.9 - 18.9 54.9 25 .0 - 18.4 101.0 - 5.4 63.0 - 5.5 63.5 - 18.7 52.6 26 .0 - 19.4 119.0 - 5.7 35.1 - 5.6 35.0 - 17.0 27.2 27 .0 - 18.8 137.2 - 6.0 7.2 - 6.0 7.3 - 15.9 - 13.8 28 .0 - 17.2 149.7 - 6.2 - 21.2 - 6.2 - 20.6 - 13.6 - 47.1 29 .0 - 16.0 153.3 - 6.5 - 50.9 - 6.5 - 51.1 - 11.5 - 79.6 30 .0 - 16.7 150.7 - 7.0 - 81.9 - 7.0 - 81.9 - 9.8 - 105.0 31 .0 - 19.9 - 177.5 - 8.0 - 111.7 - 8.1 - 111.4 - 8.8 - 125.6
cht3029 - qeg dc - 31ghz 4bit digital attenuator ref. : dscht3029 - qeg5357 - 23 dec 15 6 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 - www.ums - gaas.com typical board measurements tamb.= +25c, v+ = +5v, v - = - 5v insertion loss (attenuator state 0) insertion loss (attenuator state 0) s21 all states input return loss all states output return loss all states
dc - 31ghz 4bit digital attenuator cht3029 - qeg ref. : dscht3029 - qeg5357 - 23 dec 15 7 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 - www.ums - gaas.com typical board measurements tamb.= +25c, v+ = +5v, v - = - 5v attenuation error versus frequency all states attenuation error versus state 2 ghz < frequency < 31 g h z rms attenuation error versus frequency successive attenuation error versus state 2 ghz < frequency < 31 g h z
cht3029 - qeg dc - 31ghz 4bit digital attenuator ref. : dscht3029 - qeg5357 - 23 dec 15 8 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 - www.ums - gaas.com typical board measurements tamb.= +25c, v+ = +5v, v - = - 5v phase variation versus frequency all states phase variation versus states 2 ghz < frequency < 31 g h z rms of phase variation versus frequency
dc - 31ghz 4bit digital attenuator cht3029 - qeg ref. : dscht3029 - qeg5357 - 23 dec 15 9 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 - www.ums - gaas.com package outline (1) matt e tin, lead free (green) 1 - a3 9 - nc 17 - v - units : mm 2 - a2 10 - nc 18 - nc from the standard : jedec mo - 220 3 - a1 11 - nc 19 - nc (vggd) 4 - nc 12 - gnd (2) 20 - nc 25 - gnd 5 - gnd (2) 13 - gnd (2) 21 - nc 6 - rf in 14 - rf out 22 - nc 7 - gnd (2) 15 - gnd (2) 23 - nc 8 - gnd (2) 16 - v+ 24 - a4 (1) the package outline drawing included to this data - sheet is given for indication. refer to the application note an0017 ( http://www.ums - gaas.com ) for exact package dimensions. (2) it is strongly recommended to ground all pins marked gnd through the pcb board.
cht3029 - qeg dc - 31ghz 4bit digital attenuator ref. : dscht3029 - qeg5357 - 23 dec 15 10 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 - www.ums - gaas.com definition of the sij reference planes the reference planes used for sij measurements given above are symmetrical from the symmetrical axis of the package (see drawing below). the input and output reference planes are located at 3mm offset (input wise and output wise respectively) from this axis. package information parameter value package body material rohs - compliant low stress injection molded plastic lead finish 100% matte tin ( sn ) 3 3
dc - 31ghz 4bit digital attenuator cht3029 - qeg ref. : dscht3029 - qeg5357 - 23 dec 15 11 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 - www.ums - gaas.com evaluation mother board recommended assembly table label pad number decoupling comment rf in rf out 6 14 external dc block must be used to ensure dc decoupling input and output rf accesses a 1 a2 a3 a4 3 2 1 24 not required bit control pads v+ 16 1 0n f positive supply v - 17 1 0n f negative supply
cht3029 - qeg dc - 31ghz 4bit digital attenuator ref. : dscht3029 - qeg5357 - 23 dec 15 12 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 - www.ums - gaas.com recommended package footprint refer to the application note an0017 available at http://www.ums - gaas.com for package foot print recommendations. smd mounting procedure for the mounting process standard techniques involving solder paste and a suitable reflow process can be used. for further details, see application note an0017. recommended environmental management ums products are compliant with the regulation in particular with the directives rohs n2011/65 and reach n1907/2006. more environmental data are available in the application note an0019 also available at http://www.ums - gaas.com . recommended esd management refer to the application note an0020 available at http://www.ums - gaas.com for esd sensitivity and handling recommendations for the ums package products. ordering information qfn 4x 5 package: cht3029 - qeg /xy stick: xy = 20 tape & reel: xy = 21 information furnished is believed to be accurate and reliable. however united monolithic semiconductors s.a.s. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of united monolithic semiconductors s.a.s. . specifications mentioned in thi s publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. united monolithic semiconductors s.a.s. products are not authorised for use as critical components in life support devices or systems without express written approval from united monolithic semiconductors s.a.s.

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